| PART |
Description |
Maker |
| SSO-AD-230-TO52I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| AD500-9 |
Avalanche Photodiode NIR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| APD230-LCC |
silicon avalanche photodiode
|
Roithner LaserTechnik G...
|
| SSO-AD-230NIR-TO52 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| AD500-9 |
Avalanche Photodiode NIR
|
Electronic Theatre Controls, Inc.
|
| C30737P-500 C30737 C30737E-230 C30737E-500 C30737P |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SD394-70-74-591 |
Cooled Large Area Blue Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| APD-1351-VF APD-1351-VFA APD-1351-VL APD-1351-VLA |
Mini-Size InGaAs Avalanche PHOTODIODE with Single-Mode Pigtail
|
Optoway Technology Inc
|
| APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
